OR3T206T144-DB

The OR3T206T144-DB is a chip model designed for use in a variety of applications. It is a high-performance, low-power, low-cost, low-voltage, and low-noise device. It is based on a 6-transistor (6T) static random access memory (SRAM) cell architecture.

The OR3T206T144-DB chip model features a 144-bit wide data bus, a 6-bit address bus, and a 3-bit write enable signal. It also has an integrated error detection and correction (EDC) circuit and a built-in test capability. The chip model operates at a voltage range of 2.5V to 3.3V and is capable of providing a maximum access time of 8ns. It has a maximum power consumption of 1.5W and a maximum operating temperature of 85°C.

The OR3T206T144-DB chip model is suitable for a wide range of applications, such as embedded systems, digital signal processing, telecommunications, automotive, industrial, and medical systems. It is also suitable for applications that require high-speed operation, low-power consumption, and low-voltage operation.

In conclusion, the OR3T206T144-DB chip model is a high-performance and low-power device suitable for a variety of applications. It has a 144-bit wide data bus, a 6-bit address bus, a 3-bit write enable signal, an integrated EDC circuit, and a built-in test capability. It is capable of operating at a voltage range of 2.5V to 3.3V and a maximum access time of 8ns. It has a maximum power consumption of 1.5W and a maximum operating temperature of 85°C.