|Part Life Cycle Code||Transferred|
|Collector-Emitter Voltage-Max||80 V|
|Collector Current-Max (IC)||1 A|
|Number of Terminals||3|
|Number of Elements||1|
|DC Current Gain-Min (hFE)||15|
|Transition Frequency-Nom (fT)||100 MHz|
|Power Dissipation-Max (Abs)||800 mW|
|Transistor Element Material||SILICON|
|Qualification Status||Not Qualified|
|Operating Temperature-Max||200 °C|
|Peak Reflow Temperature (Cel)||NOT SPECIFIED|
|Time@Peak Reflow Temperature-Max (s)||NOT SPECIFIED|
|Package Body Material||METAL|
|Ihs Manufacturer||MICROSEMI CORP|
|Package Description||CYLINDRICAL, O-MBCY-W3|
|Reach Compliance Code||compliant|
|Samacsys Manufacturer||Microsemi Corporation|
2N3019 Datasheet Download
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